SPICE model of memristive device using Tukey window function
نویسندگان
چکیده
منابع مشابه
SPICE model of memristive device using Tukey window function
This paper proposes a memristor SPICE model using the Tukey window (or tapered cosine window) function. Compared with the previously proposed models based on the boundary function, the proposed model is resistant to numerical errors. From the SPICE result of a relaxation oscillator, we observe that the proposed model can be effectively used to minimise the effect of round-off errors.
متن کاملSPICE model of memristive devices with threshold
Although memristive devices with threshold voltages are the norm rather than the exception in experimentally realizable systems, their SPICE programming is not yet common. Here, we show how to implement such systems in the SPICE environment. Specifically, we present SPICE models of a popular voltage-controlled memristive system specified by five different parameters for PSPICE and NGSPICE circu...
متن کاملmrPUF: A Novel Memristive Device Based Physical Unclonable Function
Physical unclonable functions (PUFs) exploit the intrinsic complexity and irreproducibility of physical systems to generate secret information. They have been proposed to provide higher level security as a hardware security primitive. PUFs are an emerging and promising solution for establishing trust in an embedded system with low overhead with respect to energy and area. Most current PUF desig...
متن کاملmrPUF: A Memristive Device based Physical Unclonable Function
Physical unclonable functions (PUFs) exploit the intrinsic complexity and irreproducibility of physical systems to generate secret information. PUFs have the potential to provide fundamentally higher security than traditional cryptographic methods by preventing the cloning of identities and the extraction of secret keys. One unique and exciting opportunity is that of using the super-high inform...
متن کاملA double barrier memristive device
We present a quantum mechanical memristive Nb/Al/Al2O3/NbxOy/Au device which consists of an ultra-thin memristive layer (NbxOy) sandwiched between an Al2O3 tunnel barrier and a Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) and HRS (high resistance state) for areas ranging between 70 μm2 and 2300 μm2 were obtained, which indicates a non-filamenta...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2015
ISSN: 1349-2543
DOI: 10.1587/elex.12.20150149